Factory Lead Time  

4 Weeks

Contact Plating  

Tin

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Weight  

1.31247g

Transistor Element Material  

SILICON

Power Dissipation (Max)  

3.13W Ta 180W Tc

Turn Off Delay Time  

125 ns

Current - Continuous Drain (Id) @ 25℃  

31A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Series  

QFET®

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Voltage - Rated DC  

200V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

31A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

3.13W

Case Connection  

DRAIN

Turn On Delay Time  

40 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

75m Ω @ 15.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

78nC @ 10V

Rise Time  

280ns

Vgs (Max)  

±30V

Fall Time (Typ)  

115 ns

Continuous Drain Current (ID)  

31A

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.075Ohm

Drain to Source Breakdown Voltage  

200V

Avalanche Energy Rating (Eas)  

640 mJ

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free